Infineon IR2213SPBF High- and Low-Side Driver IC Datasheet and Application Circuit Design

Release date:2025-10-21 Number of clicks:193

Infineon IR2213SPBF High- and Low-Side Driver IC Datasheet and Application Circuit Design

The Infineon IR2213SPBF is a high-voltage, high-speed power MOSFET and IGBT driver specifically engineered to control both high-side and low-side switches in bridge configurations. This driver IC is a fundamental component in applications such as motor drives, switch-mode power supplies (SMPS), and three-phase inverters. Its robust design integrates critical functionalities to ensure efficient, reliable, and safe switching of power semiconductors.

A primary strength of the IR2213SPBF is its ability to operate with high-side rail voltages up to 600 volts. This is made possible through Infineon's proprietary High-Voltage Integrated Circuit (HVIC) technology. This technology allows the high-side driver section to function reliably even when its reference point (the VS pin) is swinging hundreds of volts above ground, a common occurrence in half-bridge and full-bridge circuits. The IC incorporates a sophisticrated level-shifter that accurately transmits the high-side control signals from the logic level (referenced to ground) to the high-side driver (referenced to the swinging VS voltage).

The device is designed for fast switching speeds, with typical rise and fall times in the nanosecond range. This minimizes switching losses in the power MOSFETs or IGBTs it controls, leading to higher overall system efficiency. To prevent catastrophic shoot-through currents—where both the high-side and low-side switches in a leg are on simultaneously—the IR2213SPBF features a programmable dead time. This built-in interlock ensures a small, fixed delay between the turn-off of one switch and the turn-on of the complementary switch.

Key Datasheet Specifications:

Voltage Ratings: High-side offset voltage (VS) is +600V max, and the bootstrap voltage (VB) is +615V max. The low-side and logic fixed supply voltage (VCC) range is 10V to 20V.

Output Current: It can source/sink ±290 mA / ±600 mA of peak gate drive current, enabling it to quickly charge and discharge large power device input capacitances.

Propagation Delays: Typical delay times are around 150ns, with excellent matching between the high-side and low-side channels (within 50ns), which is crucial for maintaining precise control.

Undervoltage Lockout (UVLO): Both the high-side and low-side drivers feature UVLO protection. This ensures the power switches are only turned on when their gate voltage is sufficient for full saturation, preventing excessive heat generation due to operation in the linear region.

Typical Application Circuit Design:

The most common application for the IR2213SPBF is in a half-bridge configuration, the building block for three-phase inverters and full-bridge converters.

The core of the application circuit involves several critical external components:

1. Bootstrap Circuit: This is essential for generating the floating supply (VB) for the high-side driver. It consists of a bootstrap diode (Dboot) and a bootstrap capacitor (Cboot). The capacitor is charged through the diode from the VCC supply when the low-side switch is on (and VS is near ground). When the high-side switch turns on, the capacitor provides the isolated energy to keep the high-side gate driver powered above the now-high VS voltage. Selecting a fast-recovery diode and a capacitor with low leakage and sufficient capacitance is critical for stable operation.

2. Gate Resistors (Rg): A series resistor is placed on each gate output (HO and LO) to control the switching speed of the power device. This helps to dampen ringing, reduce electromagnetic interference (EMI), and can protect the driver IC from excessive current peaks. The value is a trade-off between switching loss and noise.

3. Power Supply Decoupling: Placing a high-quality ceramic decoupling capacitor (e.g., 100nF) very close to the VCC and COM pins is mandatory to provide the high peak currents required during switching transients and to ensure stable logic operation.

Design considerations must include careful PCB layout. Minimizing parasitic inductance in the high-current loop (from the bootstrap capacitor, through the driver IC, to the power switch gate and back) is paramount. This involves using short, wide traces to prevent voltage spikes that could exceed the IC's absolute maximum ratings and cause failure.

ICGOODFIND Summary

The Infineon IR2213SPBF is a highly robust and versatile high- and low-side driver IC, leveraging advanced HVIC technology to simplify the control of high-voltage bridge circuits. Its integrated features like matched propagation delays, programmable dead time, and UVLO protection make it an excellent choice for designers seeking to build efficient and reliable motor control, inverter, and power conversion systems. Proper attention to the bootstrap component selection and PCB layout is crucial for unlocking its full performance potential.

Keywords:

1. Half-Bridge Driver

2. Bootstrap Circuit

3. HVIC Technology

4. Dead Time

5. Undervoltage Lockout (UVLO)

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