Infineon BSZ019N03LSATMA1 30V N-Channel MOSFET Datasheet and Application Overview
The Infineon BSZ019N03LSATMA1 is a highly efficient N-Channel MOSFET designed using advanced OptiMOS™ technology, offering an optimal blend of low on-state resistance and high switching performance. With a drain-source voltage (VDS) rating of 30V, this MOSFET is particularly suited for low-voltage, high-frequency switching applications, including power management in computing, automotive systems, and portable electronics.
A key highlight of the BSZ019N03LSATMA1 is its exceptionally low on-resistance (RDS(on)) of just 1.9 mΩ at 10 V gate-source voltage. This low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation in applications such as DC-DC converters and motor control circuits. The device also offers a compact and thermally efficient SuperSO8 package, which enhances power dissipation and allows for higher power density in space-constrained designs.
The MOSFET’s low gate charge (Qg) and fast switching characteristics make it ideal for high-frequency operation, enabling smaller passive components and more compact power supply designs. Furthermore, its robustness and reliability are backed by Infineon’s quality standards, ensuring performance under demanding conditions.
Typical applications include:
- Load switching in battery management systems (BMS)
- Synchronous rectification in switched-mode power supplies (SMPS)
- Motor drive control in automotive and industrial applications
The Infineon BSZ019N03LSATMA1 stands out for its ultra-low RDS(on), high switching speed, and excellent thermal performance, making it a top choice for modern power electronics designs requiring efficiency and compactness.
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Keywords:
OptiMOS™, Low RDS(on), SuperSO8 Package, Synchronous Rectification, DC-DC Converters
