Infineon IPB65R190CFDA 190mΩ OptiMOS 6 Power MOSFET: Engineered for High-Efficiency Power Conversion

In the rapidly advancing field of power electronics, achieving higher efficiency, power density, and thermal performance is paramount. The Infineon IPB65R190CFDA, a member of the latest OptiMOS™ 6 200V family, stands out as a benchmark product designed to meet these demanding requirements. With an ultra-low on-state resistance (RDS(on)) of just 190mΩ, this power MOSFET is engineered to minimize conduction losses, making it an exceptional choice for high-efficiency switched-mode power supplies (SMPS), motor drives, solar inverters, and industrial power systems.

A key highlight of this device is its superior switching performance. The OptiMOS 6 technology leverages advanced trench semiconductor processes and new package innovations to significantly reduce both switching and conduction losses. This results in reduced energy dissipation and higher overall system efficiency, even at elevated switching frequencies. The ability to operate efficiently at higher frequencies allows designers to use smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall size and cost of the power solution.

The IPB65R190CFDA is offered in the high-performance D2PAK-7 (TO-263-7) package. This package features an additional source sense pin, which enables Kelvin source connection for the gate driver. This is critical for minimizing parasitic inductance in the gate drive loop, leading to cleaner switching waveforms, reduced voltage overshoot, and better control over switching behavior. This results in lower electromagnetic interference (EMI) and more stable operation, which is essential for noise-sensitive applications.

Furthermore, this MOSFET demonstrates excellent thermal characteristics due to its low thermal resistance and efficient package design. The improved thermal performance ensures reliable operation under high-load conditions, contributing to the long-term durability and robustness of the end application. Its high current-handling capability also makes it suitable for demanding environments such as server power supplies, telecom infrastructure, and energy storage systems.

ICGOODFIND: The Infineon IPB65R190CFDA OptiMOS™ 6 200V MOSFET sets a new standard with its industry-leading 190mΩ RDS(on), superior switching performance, and advanced Kelvin source package. It is an optimal solution for designers aiming to push the boundaries of efficiency and power density in modern power conversion systems.

Keywords:

Power MOSFET

High Efficiency

OptiMOS 6

190mΩ RDS(on)

Kelvin Source Connection