Infineon IPW90R500C3: A 900V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPW90R500C3, a 900V superjunction MOSFET that sets a new benchmark for performance in demanding power conversion applications. Engineered with the proprietary CoolMOS™ C3 technology, this transistor is designed to minimize energy losses and maximize reliability, making it an ideal choice for switch-mode power supplies (SMPS), industrial motor drives, and renewable energy systems.

A key highlight of the IPW90R500C3 is its exceptionally low effective on-state resistance (R DS(on)) of just 500mΩ (max). This ultra-low resistance is pivotal in reducing conduction losses, especially at high currents, which directly translates to higher overall system efficiency and cooler operation. The device's ability to handle high voltages up to 900V provides a robust safety margin, enhancing system reliability in environments prone to voltage spikes and surges, such as in power factor correction (PFC) stages.

Furthermore, the transistor boasts superior switching characteristics. The optimized gate charge (Q G) and low figure-of-merit (FOM) ensure rapid switching transitions. This minimizes switching losses, a critical factor for high-frequency operation that allows for the design of smaller, more compact magnetic components and filters. The result is a significant increase in power density, enabling manufacturers to create more powerful systems in smaller form factors.

The Infineon IPW90R500C3 also features a low gate charge and compatibility with standard drive ICs, simplifying circuit design and reducing stress on the gate driver circuitry. Its high avalanche ruggedness guarantees durability under extreme conditions, ensuring long-term operational stability.

ICGOOODFIND: The Infineon IPW90R500C3 stands out as a premier solution for engineers pushing the limits of efficiency and power density. Its combination of high voltage capability, ultra-low on-resistance, and fast switching performance makes it an indispensable component for the next generation of high-efficiency power supplies and industrial systems.

Keywords: CoolMOS™ C3, High Voltage MOSFET, Low R DS(on), High-Efficiency, Power Density